GaN/AlGaN nanostructures for intersubband optoelectronics

M. Tchernycheva; H. Macchadani; L. Nevou; J. Mangeney; F. H. Julien; P. K. Kandaswamy; A. Wirthmüller; E. Monroy; A. Vardi; S. Schacham; G. Bahir

doi:10.1002/pssa.200983565

GaN/AlGaN nanostructures for intersubband optoelectronics

M. Tchernycheva
, H. Macchadani
, L. Nevou
, J. Mangeney
, F. H. Julien
, P. K. Kandaswamy
, A. Wirthmüller
, E. Monroy
, A. Vardi
, S. Schacham
, G. Bahir

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm ² size provide a frequency response above 10 GHz at 1.5mm wavelength.

Original language	English
Pages (from-to)	1421-1424
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	207
Issue number	6
DOIs	https://doi.org/10.1002/pssa.200983565
State	Published - Jun 2010
Externally published	Yes

Keywords

AlN
GaN
Infrared absorption
Photodetectors
Pump-and-probe experiments
Quantum dots
Quantum wells

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10.1002/pssa.200983565

Cite this

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title = "GaN/AlGaN nanostructures for intersubband optoelectronics",

abstract = "We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm 2 size provide a frequency response above 10 GHz at 1.5mm wavelength.",

keywords = "AlN, GaN, Infrared absorption, Photodetectors, Pump-and-probe experiments, Quantum dots, Quantum wells",

author = "M. Tchernycheva and H. Macchadani and L. Nevou and J. Mangeney and Julien, \{F. H.\} and Kandaswamy, \{P. K.\} and A. Wirthm{\"u}ller and E. Monroy and A. Vardi and S. Schacham and G. Bahir",

year = "2010",

month = jun,

doi = "10.1002/pssa.200983565",

language = "אנגלית",

volume = "207",

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journal = "Physica Status Solidi (A) Applications and Materials Science",

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TY - JOUR

T1 - GaN/AlGaN nanostructures for intersubband optoelectronics

AU - Tchernycheva, M.

AU - Macchadani, H.

AU - Nevou, L.

AU - Mangeney, J.

AU - Julien, F. H.

AU - Kandaswamy, P. K.

AU - Wirthmüller, A.

AU - Monroy, E.

AU - Vardi, A.

AU - Schacham, S.

AU - Bahir, G.

PY - 2010/6

Y1 - 2010/6

N2 - We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm 2 size provide a frequency response above 10 GHz at 1.5mm wavelength.

AB - We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm 2 size provide a frequency response above 10 GHz at 1.5mm wavelength.

KW - AlN

KW - GaN

KW - Infrared absorption

KW - Photodetectors

KW - Pump-and-probe experiments

KW - Quantum dots

KW - Quantum wells

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JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 6

ER -

GaN/AlGaN nanostructures for intersubband optoelectronics

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Keywords

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