GaN/AlGaN nanostructures for intersubband optoelectronics

M. Tchernycheva; H. Macchadani; L. Nevou; J. Mangeney; F. H. Julien; P. K. Kandaswamy; A. Wirthmüller; E. Monroy; A. Vardi; S. Schacham; G. Bahir

doi:10.1002/pssa.200983565

GaN/AlGaN nanostructures for intersubband optoelectronics

M. Tchernycheva, H. Macchadani, L. Nevou, J. Mangeney, F. H. Julien, P. K. Kandaswamy, A. Wirthmüller, E. Monroy, A. Vardi, S. Schacham, G. Bahir

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm ² size provide a frequency response above 10 GHz at 1.5mm wavelength.

Original language	English
Pages (from-to)	1421-1424
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	207
Issue number	6
DOIs	https://doi.org/10.1002/pssa.200983565
State	Published - Jun 2010
Externally published	Yes

Keywords

AlN
GaN
Infrared absorption
Photodetectors
Pump-and-probe experiments
Quantum dots
Quantum wells

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10.1002/pssa.200983565

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@article{714ac04dba6b495bbad2279d8737eea6,

title = "GaN/AlGaN nanostructures for intersubband optoelectronics",

abstract = "We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm 2 size provide a frequency response above 10 GHz at 1.5mm wavelength.",

keywords = "AlN, GaN, Infrared absorption, Photodetectors, Pump-and-probe experiments, Quantum dots, Quantum wells",

author = "M. Tchernycheva and H. Macchadani and L. Nevou and J. Mangeney and Julien, {F. H.} and Kandaswamy, {P. K.} and A. Wirthm{\"u}ller and E. Monroy and A. Vardi and S. Schacham and G. Bahir",

year = "2010",

month = jun,

doi = "10.1002/pssa.200983565",

language = "אנגלית",

volume = "207",

pages = "1421--1424",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "6",

}

TY - JOUR

T1 - GaN/AlGaN nanostructures for intersubband optoelectronics

AU - Tchernycheva, M.

AU - Macchadani, H.

AU - Nevou, L.

AU - Mangeney, J.

AU - Julien, F. H.

AU - Kandaswamy, P. K.

AU - Wirthmüller, A.

AU - Monroy, E.

AU - Vardi, A.

AU - Schacham, S.

AU - Bahir, G.

PY - 2010/6

Y1 - 2010/6

N2 - We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm 2 size provide a frequency response above 10 GHz at 1.5mm wavelength.

AB - We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm 2 size provide a frequency response above 10 GHz at 1.5mm wavelength.

KW - AlN

KW - GaN

KW - Infrared absorption

KW - Photodetectors

KW - Pump-and-probe experiments

KW - Quantum dots

KW - Quantum wells

UR - http://www.scopus.com/inward/record.url?scp=77954287038&partnerID=8YFLogxK

U2 - 10.1002/pssa.200983565

DO - 10.1002/pssa.200983565

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:77954287038

SN - 1862-6300

VL - 207

SP - 1421

EP - 1424

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 6

ER -

GaN/AlGaN nanostructures for intersubband optoelectronics

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