GaN/AlGaN nanostructures for intersubband optoelectronics

M. Tchernycheva, H. Macchadani, L. Nevou, J. Mangeney, F. H. Julien, P. K. Kandaswamy, A. Wirthmüller, E. Monroy, A. Vardi, S. Schacham, G. Bahir

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17×17μm 2 size provide a frequency response above 10 GHz at 1.5mm wavelength.

Original languageEnglish
Pages (from-to)1421-1424
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number6
StatePublished - Jun 2010
Externally publishedYes


  • AlN
  • GaN
  • Infrared absorption
  • Photodetectors
  • Pump-and-probe experiments
  • Quantum dots
  • Quantum wells


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