GaN/AIGaN intersubband optoelectronic devices

H. Machhadani; P. Kandaswamy; S. Sakr; A. Vardi; A. Wirtmüller; L. Nevou; F. Guillot; G. Pozzovivo; M. Tchernycheva; A. Lupu; L. Vivien; P. Crozat; E. Warde; C. Bougerol; S. Schacham; G. Strasser; G. Bahir; E. Monroy; F. H. Julien

doi:10.1088/1367-2630/11/12/125023

GaN/AIGaN intersubband optoelectronic devices

H. Machhadani, P. Kandaswamy, S. Sakr, A. Vardi, A. Wirtmüller, L. Nevou, F. Guillot, G. Pozzovivo, M. Tchernycheva, A. Lupu, L. Vivien, P. Crozat, E. Warde, C. Bougerol, S. Schacham, G. Strasser, G. Bahir, E. Monroy, F. H. Julien

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Abstract

This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near- to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.

Original language	English
Article number	125023
Journal	New Journal of Physics
Volume	11
DOIs	https://doi.org/10.1088/1367-2630/11/12/125023
State	Published - 17 Dec 2009
Externally published	Yes

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Machhadani, H., Kandaswamy, P., Sakr, S., Vardi, A., Wirtmüller, A., Nevou, L., Guillot, F., Pozzovivo, G., Tchernycheva, M., Lupu, A., Vivien, L., Crozat, P., Warde, E., Bougerol, C., Schacham, S., Strasser, G., Bahir, G., Monroy, E., & Julien, F. H. (2009). GaN/AIGaN intersubband optoelectronic devices. New Journal of Physics, 11, Article 125023. https://doi.org/10.1088/1367-2630/11/12/125023

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title = "GaN/AIGaN intersubband optoelectronic devices",

abstract = "This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near- to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.",

author = "H. Machhadani and P. Kandaswamy and S. Sakr and A. Vardi and A. Wirtm{\"u}ller and L. Nevou and F. Guillot and G. Pozzovivo and M. Tchernycheva and A. Lupu and L. Vivien and P. Crozat and E. Warde and C. Bougerol and S. Schacham and G. Strasser and G. Bahir and E. Monroy and Julien, {F. H.}",

year = "2009",

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doi = "10.1088/1367-2630/11/12/125023",

language = "אנגלית",

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Machhadani, H, Kandaswamy, P, Sakr, S, Vardi, A, Wirtmüller, A, Nevou, L, Guillot, F, Pozzovivo, G, Tchernycheva, M, Lupu, A, Vivien, L, Crozat, P, Warde, E, Bougerol, C, Schacham, S, Strasser, G, Bahir, G, Monroy, E & Julien, FH 2009, 'GaN/AIGaN intersubband optoelectronic devices', New Journal of Physics, vol. 11, 125023. https://doi.org/10.1088/1367-2630/11/12/125023

TY - JOUR

T1 - GaN/AIGaN intersubband optoelectronic devices

AU - Machhadani, H.

AU - Kandaswamy, P.

AU - Sakr, S.

AU - Vardi, A.

AU - Wirtmüller, A.

AU - Nevou, L.

AU - Guillot, F.

AU - Pozzovivo, G.

AU - Tchernycheva, M.

AU - Lupu, A.

AU - Vivien, L.

AU - Crozat, P.

AU - Warde, E.

AU - Bougerol, C.

AU - Schacham, S.

AU - Strasser, G.

AU - Bahir, G.

AU - Monroy, E.

AU - Julien, F. H.

PY - 2009/12/17

Y1 - 2009/12/17

N2 - This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near- to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.

AB - This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near- to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.

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GaN/AIGaN intersubband optoelectronic devices

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