Frequency dispersion of HTSC-film impedance in the MHz range

S. Feldberg; A. Voronel; V. Gore; M. Levin; R. Pogreb; V. Sandomirsky; K. Yugai

doi:10.1007/BF00724591

Frequency dispersion of HTSC-film impedance in the MHz range

S. Feldberg, A. Voronel, V. Gore, M. Levin, R. Pogreb, V. Sandomirsky, K. Yugai

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The impedance of a circuit including an HTSC film as a function of temperature and frequency has been measured, and the presence of an intrinsic reactance in the HTSC films has been shown. The equivalent scheme of the measuring circuit has been synthesized, and the temperature dependence, type, and value of the HTSC-film reactance has been determined in the transition region near T_c. It is shown that the change of reactance sign with temperature observed earlier by a number of researchers and attributed to the intrinsic property of HTSC-film reactance was rather the result of the T-independent parasite reactive elements while the film impedance was becoming small.

Original language	English
Pages (from-to)	471-473
Number of pages	3
Journal	Journal of Superconductivity
Volume	7
Issue number	2
DOIs	https://doi.org/10.1007/BF00724591
State	Published - Apr 1994

Keywords

HTSC film
equivalent scheme
impedance dispersion
low frequency

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10.1007/BF00724591

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abstract = "The impedance of a circuit including an HTSC film as a function of temperature and frequency has been measured, and the presence of an intrinsic reactance in the HTSC films has been shown. The equivalent scheme of the measuring circuit has been synthesized, and the temperature dependence, type, and value of the HTSC-film reactance has been determined in the transition region near Tc. It is shown that the change of reactance sign with temperature observed earlier by a number of researchers and attributed to the intrinsic property of HTSC-film reactance was rather the result of the T-independent parasite reactive elements while the film impedance was becoming small.",

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author = "S. Feldberg and A. Voronel and V. Gore and M. Levin and R. Pogreb and V. Sandomirsky and K. Yugai",

year = "1994",

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AU - Feldberg, S.

AU - Voronel, A.

AU - Gore, V.

AU - Levin, M.

AU - Pogreb, R.

AU - Sandomirsky, V.

AU - Yugai, K.

PY - 1994/4

Y1 - 1994/4

N2 - The impedance of a circuit including an HTSC film as a function of temperature and frequency has been measured, and the presence of an intrinsic reactance in the HTSC films has been shown. The equivalent scheme of the measuring circuit has been synthesized, and the temperature dependence, type, and value of the HTSC-film reactance has been determined in the transition region near Tc. It is shown that the change of reactance sign with temperature observed earlier by a number of researchers and attributed to the intrinsic property of HTSC-film reactance was rather the result of the T-independent parasite reactive elements while the film impedance was becoming small.

AB - The impedance of a circuit including an HTSC film as a function of temperature and frequency has been measured, and the presence of an intrinsic reactance in the HTSC films has been shown. The equivalent scheme of the measuring circuit has been synthesized, and the temperature dependence, type, and value of the HTSC-film reactance has been determined in the transition region near Tc. It is shown that the change of reactance sign with temperature observed earlier by a number of researchers and attributed to the intrinsic property of HTSC-film reactance was rather the result of the T-independent parasite reactive elements while the film impedance was becoming small.

KW - HTSC film

KW - equivalent scheme

KW - impedance dispersion

KW - low frequency

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Frequency dispersion of HTSC-film impedance in the MHz range

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