Failure dynamics of the IGBT during turn-off for undamped inductive loading conditions

Chih Chieh Shen; Allen R. Hefner; David W. Berning; Joseph B. Bernstein

doi:10.1109/28.833780

Failure dynamics of the IGBT during turn-off for undamped inductive loading conditions

Chih Chieh Shen, Allen R. Hefner, David W. Berning, Joseph B. Bernstein

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for undamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations.

Original language	English
Pages (from-to)	614-624
Number of pages	11
Journal	IEEE Transactions on Industry Applications
Volume	36
Issue number	2
DOIs	https://doi.org/10.1109/28.833780
State	Published - 2000
Externally published	Yes

Keywords

Avalanche
Current constriction
Failure
Filament
Insulated gate bipolar transistor
Modeling
Nondestructive testing
Reverse-bias safe operation area

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10.1109/28.833780

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title = "Failure dynamics of the IGBT during turn-off for undamped inductive loading conditions",

abstract = "The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for undamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations.",

keywords = "Avalanche, Current constriction, Failure, Filament, Insulated gate bipolar transistor, Modeling, Nondestructive testing, Reverse-bias safe operation area",

author = "Shen, {Chih Chieh} and Hefner, {Allen R.} and Berning, {David W.} and Bernstein, {Joseph B.}",

note = "Funding Information: Paper IPCSD 99–74, presented at the 1998 Industry Applications Society Annual Meeting, St. Louis, MO, October 12–16, and approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Power Electronics Devices and Components Committee of the IEEE Industry Applications Society. Manuscript submitted for review October 15, 1998 and released for publication November 5, 1999. This work was supported in part by the National Institute of Standards and Technology Office of Microelectronics Programs and by the Office of Naval Research Power Electronic Building Block Program under Grant N000149710824.",

year = "2000",

doi = "10.1109/28.833780",

language = "אנגלית",

volume = "36",

pages = "614--624",

journal = "IEEE Transactions on Industry Applications",

issn = "0093-9994",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Shen, Chih Chieh

AU - Hefner, Allen R.

AU - Berning, David W.

AU - Bernstein, Joseph B.

N1 - Funding Information: Paper IPCSD 99–74, presented at the 1998 Industry Applications Society Annual Meeting, St. Louis, MO, October 12–16, and approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Power Electronics Devices and Components Committee of the IEEE Industry Applications Society. Manuscript submitted for review October 15, 1998 and released for publication November 5, 1999. This work was supported in part by the National Institute of Standards and Technology Office of Microelectronics Programs and by the Office of Naval Research Power Electronic Building Block Program under Grant N000149710824.

PY - 2000

Y1 - 2000

N2 - The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for undamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations.

AB - The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for undamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations.

KW - Avalanche

KW - Current constriction

KW - Failure

KW - Filament

KW - Insulated gate bipolar transistor

KW - Modeling

KW - Nondestructive testing

KW - Reverse-bias safe operation area

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JF - IEEE Transactions on Industry Applications

IS - 2

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Failure dynamics of the IGBT during turn-off for undamped inductive loading conditions

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Keywords

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