TY - JOUR
T1 - Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
AU - Shen, Chih Chieh
AU - Hefner, Allen R.
AU - Berning, David W.
AU - Bernstein, Joseph B.
PY - 1998
Y1 - 1998
N2 - The internal failure dynamics of the Insulated Gate Bipolar Transistor (IGBT) for unclamped Inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Reverse Bias Safe Operating Area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations.
AB - The internal failure dynamics of the Insulated Gate Bipolar Transistor (IGBT) for unclamped Inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Reverse Bias Safe Operating Area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations.
UR - http://www.scopus.com/inward/record.url?scp=0032315915&partnerID=8YFLogxK
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AN - SCOPUS:0032315915
SN - 0197-2618
VL - 2
SP - 831
EP - 839
JO - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
JF - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
T2 - Proceedings of the 1998 IEEE Industry Applications Conference. Part 1 (of 3)
Y2 - 12 October 1998 through 15 October 1998
ER -