Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions

Chih Chieh Shen, Allen R. Hefner, David W. Berning, Joseph B. Bernstein

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

The internal failure dynamics of the Insulated Gate Bipolar Transistor (IGBT) for unclamped Inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Reverse Bias Safe Operating Area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations.

Original languageEnglish
Pages (from-to)831-839
Number of pages9
JournalConference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Volume2
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE Industry Applications Conference. Part 1 (of 3) - St.Louis, MO, USA
Duration: 12 Oct 199815 Oct 1998

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