Enhanced gate induced drain leakage current in HfO2 MOSFETs due to remote interface trap-assisted tunneling

M. Gurfinkel; J. S. Suehle; J. B. Bernstein; Yoram Shapira

doi:10.1109/IEDM.2006.346896

Enhanced gate induced drain leakage current in HfO₂ MOSFETs due to remote interface trap-assisted tunneling

M. Gurfinkel, J. S. Suehle, J. B. Bernstein, Yoram Shapira

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

High-κ dielectric gate stack MOSFETs have been characterized by separating the transversal and lateral electric field contributions to the substrate current. The results show that at low gate biases the substrate current is dominated by a trap-assisted tunneling component denoted by gate induced drain leakage (GIDL) current, which is not observed in conventional SiO₂ devices. Ultra-fast substrate current measurements rule out transient charging of the gate oxide as the cause of this component. A physical model of the observed substrate current dependence is proposed.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346896
State	Published - 2006
Externally published	Yes
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 10 Dec 2006 → 13 Dec 2006

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	10/12/06 → 13/12/06

Access to Document

10.1109/IEDM.2006.346896

Cite this

Gurfinkel, M., Suehle, J. S., Bernstein, J. B., & Shapira, Y. (2006). Enhanced gate induced drain leakage current in HfO₂ MOSFETs due to remote interface trap-assisted tunneling. In 2006 International Electron Devices Meeting Technical Digest, IEDM Article 4154315 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346896

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title = "Enhanced gate induced drain leakage current in HfO2 MOSFETs due to remote interface trap-assisted tunneling",

abstract = "High-κ dielectric gate stack MOSFETs have been characterized by separating the transversal and lateral electric field contributions to the substrate current. The results show that at low gate biases the substrate current is dominated by a trap-assisted tunneling component denoted by gate induced drain leakage (GIDL) current, which is not observed in conventional SiO2 devices. Ultra-fast substrate current measurements rule out transient charging of the gate oxide as the cause of this component. A physical model of the observed substrate current dependence is proposed.",

author = "M. Gurfinkel and Suehle, \{J. S.\} and Bernstein, \{J. B.\} and Yoram Shapira",

year = "2006",

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Gurfinkel, M, Suehle, JS, Bernstein, JB & Shapira, Y 2006, Enhanced gate induced drain leakage current in HfO₂ MOSFETs due to remote interface trap-assisted tunneling. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154315, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 10/12/06. https://doi.org/10.1109/IEDM.2006.346896

Enhanced gate induced drain leakage current in HfO₂ MOSFETs due to remote interface trap-assisted tunneling. / Gurfinkel, M.; Suehle, J. S.; Bernstein, J. B. et al.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154315 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - High-κ dielectric gate stack MOSFETs have been characterized by separating the transversal and lateral electric field contributions to the substrate current. The results show that at low gate biases the substrate current is dominated by a trap-assisted tunneling component denoted by gate induced drain leakage (GIDL) current, which is not observed in conventional SiO2 devices. Ultra-fast substrate current measurements rule out transient charging of the gate oxide as the cause of this component. A physical model of the observed substrate current dependence is proposed.

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