Electromigration simulation under DC/AC stresses considering microstructure

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Abstract

In this work, we present a dynamic finite difference simulation on the stress evolution along the interconnect under both DC and AC current densities, while taking into account the inhomogeneity of grain size and grain boundary orientation. Furthermore, we related both the accelerating stress and microstructural conditions to the lifetime by assuming certain built-up stress levels as failure criteria.

Original languageEnglish
Title of host publicationProceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages41-43
Number of pages3
ISBN (Electronic)0780351746, 9780780351745
DOIs
StatePublished - 1999
Externally publishedYes
Event1999 IEEE International Interconnect Technology Conference, IITC 1999 - San Francisco, United States
Duration: 24 May 199926 May 1999

Publication series

NameProceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Conference

Conference1999 IEEE International Interconnect Technology Conference, IITC 1999
Country/TerritoryUnited States
CitySan Francisco
Period24/05/9926/05/99

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