TY - GEN
T1 - Electromigration simulation under DC/AC stresses considering microstructure
AU - Zhang, Wei
AU - Bernstein, Joseph B.
N1 - Publisher Copyright:
© 1999 IEEE.
PY - 1999
Y1 - 1999
N2 - In this work, we present a dynamic finite difference simulation on the stress evolution along the interconnect under both DC and AC current densities, while taking into account the inhomogeneity of grain size and grain boundary orientation. Furthermore, we related both the accelerating stress and microstructural conditions to the lifetime by assuming certain built-up stress levels as failure criteria.
AB - In this work, we present a dynamic finite difference simulation on the stress evolution along the interconnect under both DC and AC current densities, while taking into account the inhomogeneity of grain size and grain boundary orientation. Furthermore, we related both the accelerating stress and microstructural conditions to the lifetime by assuming certain built-up stress levels as failure criteria.
UR - http://www.scopus.com/inward/record.url?scp=85039954610&partnerID=8YFLogxK
U2 - 10.1109/IITC.1999.787072
DO - 10.1109/IITC.1999.787072
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AN - SCOPUS:85039954610
T3 - Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999
SP - 41
EP - 43
BT - Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1999 IEEE International Interconnect Technology Conference, IITC 1999
Y2 - 24 May 1999 through 26 May 1999
ER -