TY - GEN
T1 - Electrical transport mechanism in VO2 thin films
AU - Golan, G.
AU - Axelevitch, A.
PY - 2010
Y1 - 2010
N2 - Vanadium oxide (VO2) transforms from a semiconductor phase to a metal phase at a temperature of 67 °C. This phase transformation is accompanied by a dramatically change in its electrical and optical properties. Therefore, vanadium oxide thin films are very attractive for switching applications. This paper presents the optical and electrical properties of vanadium oxide thin films deposited by vacuum thermal evaporation of metallic vanadium following by oxidation. We have studied the electro-physical behavior of these VO2 films during their phase transition. It was shown that the electrical transport mechanism of the obtained vanadium oxide films differs in low and high electrical fields. In low electrical fields, conductivity is obtained by the Schottky transport mechanism, whereas in high electrical fields conductivity ranges from Ohmic mechanism for relatively low fields, to Poole-Frenkel mechanism for higher fields. FTIR and near IR reflectance characteristics of the obtained films are presented.
AB - Vanadium oxide (VO2) transforms from a semiconductor phase to a metal phase at a temperature of 67 °C. This phase transformation is accompanied by a dramatically change in its electrical and optical properties. Therefore, vanadium oxide thin films are very attractive for switching applications. This paper presents the optical and electrical properties of vanadium oxide thin films deposited by vacuum thermal evaporation of metallic vanadium following by oxidation. We have studied the electro-physical behavior of these VO2 films during their phase transition. It was shown that the electrical transport mechanism of the obtained vanadium oxide films differs in low and high electrical fields. In low electrical fields, conductivity is obtained by the Schottky transport mechanism, whereas in high electrical fields conductivity ranges from Ohmic mechanism for relatively low fields, to Poole-Frenkel mechanism for higher fields. FTIR and near IR reflectance characteristics of the obtained films are presented.
UR - http://www.scopus.com/inward/record.url?scp=77955192984&partnerID=8YFLogxK
U2 - 10.1109/MIEL.2010.5490513
DO - 10.1109/MIEL.2010.5490513
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AN - SCOPUS:77955192984
SN - 9781424472017
T3 - 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
SP - 141
EP - 144
BT - 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
T2 - 2010 27th International Conference on Microelectronics, MIEL 2010
Y2 - 16 May 2010 through 19 May 2010
ER -