Abstract
The influence of electron beam during vacuum photo-thermal processing (VPP) treatment of metal-silicon contacts, was studied. This is the first experimentally evidence for a novel effect of potential barrier variations in metal-semiconductor contacts following a VPP. The possibility to control the potential barrier in metal-silicon contacts was shown. The same nature of influence of electron beam on the potential barrier between silicon and other metals such as: Ti and Ni were presented as well. The potential barriers in: Ti-Si and Ni-Si were varied from 0.605 to 0.785 eV and from 0.571 to 0.672 eV, respectively. Furthermore, it was found experimentally that the metallic surface order in the metal-silicon pair, following VPP, was dramatically improved. Surface roughness was decreased and the electrical conductivity was increased. Finally, the influence of a non-coherent irradiation on the properties of metal-silicon contacts was studied.
| Original language | English |
|---|---|
| Pages (from-to) | 871-879 |
| Number of pages | 9 |
| Journal | Microelectronics Reliability |
| Volume | 41 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2001 |
| Externally published | Yes |
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