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Design of High-Frequency GaN HEMT-Based DC–DC Converter
Liron Cohen
,
Joseph Baruch Bernstein
,
Ilan Aharon
Department of Electrical and Electronics Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Scopus citations
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Keyphrases
DC-DC Converter
100%
Gallium Nitride
100%
Nitride-based
100%
Gallium Nitride HEMT
100%
Circuitry
33%
Switching Frequency
33%
Pulse Width Modulation
33%
Switching Power Converter
33%
Kilohertz
33%
Proposed Architecture
33%
Power Conversion System
33%
Silicon-based
33%
On chip
33%
Proposed Design
33%
Megahertz
33%
Silicon Devices
33%
Frequency Scaling
33%
Converter Module
33%
High Frequency Power Conversion
33%
On-chip Applications
33%
Transistor
33%
Ring Oscillator
33%
MHz Range
33%
High-frequency Operation
33%
Advanced Systems
33%
Engineering
Nitride
100%
Limitations
25%
Experimental Result
25%
Operating Frequency
25%
Switching Frequency
25%
Power Converter
25%
Power Conversion System
25%
Power Conversion
25%
Silicon Device
25%
System-on-Chip
25%
Transistor
25%