Design of High Frequency GaN HEMT based DC-DC Converter

Switch-mode power converters commonly operate at switching frequencies from kilohertz to a few megahertz, traditionally relying on silicon-based transistors and control circuitry. However, parasitic limitations in silicon devices constrain further frequency scaling. This paper presents a fully Gallium Nitride (GaN)-based DC-DC converter designed for high frequency operation. The proposed architecture employs a GaN based ring oscillator for on-chip pulse-width modulation generation and includes all converter modules operating within the 8-43 MHz range. Experimental results validate the proposed design, demonstrating its feasibility and performance in high-frequency power conversion. The findings support the development of integrated GaN-based power conversion systems for advance system on chip applications.