Design considerations for GaN based converters

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Wide bandgap devices permits power converters designer to accomplish new levels of efficiency, power density and improve reliability. Today Gallium-Nitride transistors are the sharp edge for any new power converters and inverters design. However, the new technology bring-out new boundaries for designers especially in terms of available switching speed. In this paper performance analysis of Gallium-Nitride transistors is presented. Begin with understating the electrical model of Gallium-Nitride transistors, comprehend its behavior focusing on the parasitic elements and theirs power dissipations, then the inherit constrains on operating frequency upper boundary of basic switch, boost and buck converters. And last, case study of finding the upper switching frequencies boundaries for EPC Gallium-Nitride transistors family.

Original languageEnglish
Title of host publication8th International Conference on Renewable Energy Research and Applications, ICRERA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages489-493
Number of pages5
ISBN (Electronic)9781728135878
DOIs
StatePublished - Nov 2019
Event8th International Conference on Renewable Energy Research and Applications, ICRERA 2019 - Brasov, Romania
Duration: 3 Nov 20196 Nov 2019

Publication series

Name8th International Conference on Renewable Energy Research and Applications, ICRERA 2019

Conference

Conference8th International Conference on Renewable Energy Research and Applications, ICRERA 2019
Country/TerritoryRomania
CityBrasov
Period3/11/196/11/19

Keywords

  • Gallium-Nitride
  • Power converters
  • Switching frequencies boundaries
  • Wide bandgap devices

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