TY - GEN
T1 - Design considerations for GaN based converters
AU - Aharon, Ilan
AU - Sitbon, Moshe
AU - Bernstein, Joseph
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/11
Y1 - 2019/11
N2 - Wide bandgap devices permits power converters designer to accomplish new levels of efficiency, power density and improve reliability. Today Gallium-Nitride transistors are the sharp edge for any new power converters and inverters design. However, the new technology bring-out new boundaries for designers especially in terms of available switching speed. In this paper performance analysis of Gallium-Nitride transistors is presented. Begin with understating the electrical model of Gallium-Nitride transistors, comprehend its behavior focusing on the parasitic elements and theirs power dissipations, then the inherit constrains on operating frequency upper boundary of basic switch, boost and buck converters. And last, case study of finding the upper switching frequencies boundaries for EPC Gallium-Nitride transistors family.
AB - Wide bandgap devices permits power converters designer to accomplish new levels of efficiency, power density and improve reliability. Today Gallium-Nitride transistors are the sharp edge for any new power converters and inverters design. However, the new technology bring-out new boundaries for designers especially in terms of available switching speed. In this paper performance analysis of Gallium-Nitride transistors is presented. Begin with understating the electrical model of Gallium-Nitride transistors, comprehend its behavior focusing on the parasitic elements and theirs power dissipations, then the inherit constrains on operating frequency upper boundary of basic switch, boost and buck converters. And last, case study of finding the upper switching frequencies boundaries for EPC Gallium-Nitride transistors family.
KW - Gallium-Nitride
KW - Power converters
KW - Switching frequencies boundaries
KW - Wide bandgap devices
UR - http://www.scopus.com/inward/record.url?scp=85080960772&partnerID=8YFLogxK
U2 - 10.1109/ICRERA47325.2019.8997080
DO - 10.1109/ICRERA47325.2019.8997080
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AN - SCOPUS:85080960772
T3 - 8th International Conference on Renewable Energy Research and Applications, ICRERA 2019
SP - 489
EP - 493
BT - 8th International Conference on Renewable Energy Research and Applications, ICRERA 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th International Conference on Renewable Energy Research and Applications, ICRERA 2019
Y2 - 3 November 2019 through 6 November 2019
ER -