Defect dynamics in ZnO varistors under electrical stress: A potential method to improve electrical properties

Men Guo, Gilad Orr, Peixiang Lan, Xia Zhao, Shlomo Glasser, Paul Ben Ishai

Research output: Contribution to journalArticlepeer-review

Abstract

ZnO-Bi2O3 based varistors are prepared by solid-state sintering and defect dynamics in the varistors under AC and DC stress are investigated using dielectric spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. By combining experimental evidence, we find that the dynamics of the occupation of the interface states by electrons is influential in ZnO varistors under AC stress and at the early stage of DC stress, which has not been noticed before. The process is beneficial to the enhancement of electrical properties of varistors by modifying double Schottky barriers at grain boundaries. After 302 h of AC stress, the breakdown field (EB) increases from 236.2 V/mm to 248.7 V/mm and the leakage current density (JL) decreases from 0.062 μA/cm2 to 0.025 μA/cm2. After 184 h of DC stress, in the same direction as the stress EB increases from 235.2 V/mm to 243.7 V/mm and JL decreases from 0.065 μA/cm2 to 0.059 μA/cm2.

Original languageEnglish
Article number117159
JournalJournal of the European Ceramic Society
Volume45
Issue number5
DOIs
StatePublished - May 2025

Keywords

  • Defect dynamics
  • Interfaces
  • Varistors
  • Zinc oxide

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