Current induced intersubband absorption in GaAs/GaAlAs quantum wells

A. Fenigstein; A. Fraenkel; E. Finkman; G. Bahir; S. E. Schacham

doi:10.1063/1.113151

Current induced intersubband absorption in GaAs/GaAlAs quantum wells

A. Fenigstein, A. Fraenkel, E. Finkman, G. Bahir, S. E. Schacham

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Abstract

The observation of intersubband (e1-e2) absorption induced by current injection in GaAs/GaAlAs multiquantum wells is reported. The new technique enables sensitive measurement of intersubband transitions in undoped quantum wells. The carrier concentration in the wells is easily controlled by varying the current density. The technique is demonstrated on undoped multiquantum well layers sandwiched in a p-i-n laser-diodelike structure. The lowest confined level was populated by biasing the junction and hence injecting carriers into the quantum wells. The spectra were taken by a Fourier transform infrared (FTIR) spectrometer, modulating the current and using the double modulation method. The dependence of the absorption on current intensity was examined and excess carrier concentration and lifetime were calculated. The induced absorption saturates at current densities higher than 100 mA/cm².

Original language	English
Pages (from-to)	2513
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113151
State	Published - 1995
Externally published	Yes

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title = "Current induced intersubband absorption in GaAs/GaAlAs quantum wells",

abstract = "The observation of intersubband (e1-e2) absorption induced by current injection in GaAs/GaAlAs multiquantum wells is reported. The new technique enables sensitive measurement of intersubband transitions in undoped quantum wells. The carrier concentration in the wells is easily controlled by varying the current density. The technique is demonstrated on undoped multiquantum well layers sandwiched in a p-i-n laser-diodelike structure. The lowest confined level was populated by biasing the junction and hence injecting carriers into the quantum wells. The spectra were taken by a Fourier transform infrared (FTIR) spectrometer, modulating the current and using the double modulation method. The dependence of the absorption on current intensity was examined and excess carrier concentration and lifetime were calculated. The induced absorption saturates at current densities higher than 100 mA/cm2.",

author = "A. Fenigstein and A. Fraenkel and E. Finkman and G. Bahir and Schacham, {S. E.}",

year = "1995",

doi = "10.1063/1.113151",

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journal = "Applied Physics Letters",

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T1 - Current induced intersubband absorption in GaAs/GaAlAs quantum wells

AU - Fenigstein, A.

AU - Fraenkel, A.

AU - Finkman, E.

AU - Bahir, G.

AU - Schacham, S. E.

PY - 1995

Y1 - 1995

N2 - The observation of intersubband (e1-e2) absorption induced by current injection in GaAs/GaAlAs multiquantum wells is reported. The new technique enables sensitive measurement of intersubband transitions in undoped quantum wells. The carrier concentration in the wells is easily controlled by varying the current density. The technique is demonstrated on undoped multiquantum well layers sandwiched in a p-i-n laser-diodelike structure. The lowest confined level was populated by biasing the junction and hence injecting carriers into the quantum wells. The spectra were taken by a Fourier transform infrared (FTIR) spectrometer, modulating the current and using the double modulation method. The dependence of the absorption on current intensity was examined and excess carrier concentration and lifetime were calculated. The induced absorption saturates at current densities higher than 100 mA/cm2.

AB - The observation of intersubband (e1-e2) absorption induced by current injection in GaAs/GaAlAs multiquantum wells is reported. The new technique enables sensitive measurement of intersubband transitions in undoped quantum wells. The carrier concentration in the wells is easily controlled by varying the current density. The technique is demonstrated on undoped multiquantum well layers sandwiched in a p-i-n laser-diodelike structure. The lowest confined level was populated by biasing the junction and hence injecting carriers into the quantum wells. The spectra were taken by a Fourier transform infrared (FTIR) spectrometer, modulating the current and using the double modulation method. The dependence of the absorption on current intensity was examined and excess carrier concentration and lifetime were calculated. The induced absorption saturates at current densities higher than 100 mA/cm2.

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Current induced intersubband absorption in GaAs/GaAlAs quantum wells

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