Correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides

Yuan Chen; John S. Suehle; Chih Chieh Shen; Joseph Bernstein; Cleston Messick; Prasad Chaparala

Correlation of highly accelerated Q_bd tests to TDDB life tests for ultra-thin gate oxides

Yuan Chen, John S. Suehle, Chih Chieh Shen, Joseph Bernstein, Cleston Messick, Prasad Chaparala

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.

Original language	English
Pages (from-to)	87-91
Number of pages	5
Journal	Annual Proceedings - Reliability Physics (Symposium)
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA Duration: 31 Mar 1998 → 2 Apr 1998

Cite this

@article{b3a0bdf6f5924a45babdcbb5e0e19e39,

title = "Correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides",

abstract = "A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.",

author = "Yuan Chen and Suehle, {John S.} and Shen, {Chih Chieh} and Joseph Bernstein and Cleston Messick and Prasad Chaparala",

year = "1998",

language = "אנגלית",

pages = "87--91",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 1998 36th IEEE International Reliability Physics Symposium ; Conference date: 31-03-1998 Through 02-04-1998",

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TY - JOUR

T1 - Correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides

AU - Chen, Yuan

AU - Suehle, John S.

AU - Shen, Chih Chieh

AU - Bernstein, Joseph

AU - Messick, Cleston

AU - Chaparala, Prasad

PY - 1998

Y1 - 1998

N2 - A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.

AB - A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.

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AN - SCOPUS:0031649738

SN - 0099-9512

SP - 87

EP - 91

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 1998 36th IEEE International Reliability Physics Symposium

Y2 - 31 March 1998 through 2 April 1998

ER -

Correlation of highly accelerated Q_bd tests to TDDB life tests for ultra-thin gate oxides

Abstract

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