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Contribution of the graded region of a HgCdTe diode to its saturation current
S. E. Schacham
, E. Finkman
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Contribution to journal
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peer-review
1
Scopus citations
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Dive into the research topics of 'Contribution of the graded region of a HgCdTe diode to its saturation current'. Together they form a unique fingerprint.
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Keyphrases
HgCdTe
100%
Saturation Current
100%
Diode
100%
P-type
50%
Excess Carriers
50%
Recombination Mechanism
50%
Electric Field (E-field)
50%
Doping Concentration
50%
Parameter Influence
50%
Substrate Concentration
50%
Depletion Region
50%
Hg1-xCdxTe
50%
Surface Junction
50%
Drift Component
50%
Junction Depth
50%
Minority Carriers
50%
Surface Concentration
50%
Engineering
Experimental Result
100%
Excess Carrier
100%
Depletion Region
100%
Recombination Mechanism
100%
Junction Depth
100%
Dopant Concentration
100%
Surface Concentration
100%
Minority Carriers
100%
Substrate Concentration
100%
Electric Field
100%
Material Science
Doping (Additives)
100%
Surface (Surface Science)
100%