Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

M. Gurfinkel; Jinwoo Kim; S. Potbhare; H. D. Xiong; K. P. Cheung; J. Suehle; J. B. Bernstein; Yoram Shapira; A. J. Lelis; D. Habersat; N. Goldsman

doi:10.1109/IRWS.2007.4469233

Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

M. Gurfinkel, Jinwoo Kim, S. Potbhare, H. D. Xiong, K. P. Cheung, J. Suehle, J. B. Bernstein, Yoram Shapira, A. J. Lelis, D. Habersat, N. Goldsman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Original language	English
Title of host publication	2007 IEEE International Integrated Reliability Workshop Final Report, IRW
Pages	111-113
Number of pages	3
DOIs	https://doi.org/10.1109/IRWS.2007.4469233
State	Published - 2007
Externally published	Yes
Event	2007 IEEE International Integrated Reliability Workshop, IRW - S. Lake Tahoe, CA, United States Duration: 15 Oct 2007 → 18 Oct 2007

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Conference

Conference	2007 IEEE International Integrated Reliability Workshop, IRW
Country/Territory	United States
City	S. Lake Tahoe, CA
Period	15/10/07 → 18/10/07

Access to Document

10.1109/IRWS.2007.4469233

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Gurfinkel, M., Kim, J., Potbhare, S., Xiong, H. D., Cheung, K. P., Suehle, J., Bernstein, J. B., Shapira, Y., Lelis, A. J., Habersat, D., & Goldsman, N. (2007). Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels. In 2007 IEEE International Integrated Reliability Workshop Final Report, IRW (pp. 111-113). Article 4469233 (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2007.4469233

@inproceedings{19e7a21d2d1d4588afac6c4be704e9f9,

title = "Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels",

author = "M. Gurfinkel and Jinwoo Kim and S. Potbhare and Xiong, {H. D.} and Cheung, {K. P.} and J. Suehle and Bernstein, {J. B.} and Yoram Shapira and Lelis, {A. J.} and D. Habersat and N. Goldsman",

year = "2007",

doi = "10.1109/IRWS.2007.4469233",

language = "אנגלית",

isbn = "1424411726",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "111--113",

booktitle = "2007 IEEE International Integrated Reliability Workshop Final Report, IRW",

note = "2007 IEEE International Integrated Reliability Workshop, IRW ; Conference date: 15-10-2007 Through 18-10-2007",

}

Gurfinkel, M, Kim, J, Potbhare, S, Xiong, HD, Cheung, KP, Suehle, J, Bernstein, JB, Shapira, Y, Lelis, AJ, Habersat, D & Goldsman, N 2007, Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels. in 2007 IEEE International Integrated Reliability Workshop Final Report, IRW., 4469233, IEEE International Integrated Reliability Workshop Final Report, pp. 111-113, 2007 IEEE International Integrated Reliability Workshop, IRW, S. Lake Tahoe, CA, United States, 15/10/07. https://doi.org/10.1109/IRWS.2007.4469233

Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels. / Gurfinkel, M.; Kim, Jinwoo; Potbhare, S. et al.
2007 IEEE International Integrated Reliability Workshop Final Report, IRW. 2007. p. 111-113 4469233 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Cheung, K. P.

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AU - Bernstein, J. B.

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AU - Habersat, D.

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Gurfinkel M, Kim J, Potbhare S, Xiong HD, Cheung KP, Suehle J et al. Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels. In 2007 IEEE International Integrated Reliability Workshop Final Report, IRW. 2007. p. 111-113. 4469233. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2007.4469233

Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

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