Challenges of high-κ gate dielectrics for future MOS devices

J. S. Suehle; E. M. Vogel; M. D. Edelstein; C. A. Richter; N. V. Nguyen; I. Levin; D. L. Kaiser; H. Wu; J. B. Bernstein

Challenges of high-κ gate dielectrics for future MOS devices

J. S. Suehle, E. M. Vogel, M. D. Edelstein, C. A. Richter, N. V. Nguyen, I. Levin, D. L. Kaiser, H. Wu, J. B. Bernstein

Research output: Contribution to conference › Paper › peer-review

16 Scopus citations

Abstract

A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

Original language	English
Pages	90-93
Number of pages	4
State	Published - 2001
Externally published	Yes
Event	6th International Symposium on Plasma- and Process-Induced Damage - Monterrrey, CA, United States Duration: 13 May 2001 → 15 May 2001

Conference

Conference	6th International Symposium on Plasma- and Process-Induced Damage
Country/Territory	United States
City	Monterrrey, CA
Period	13/05/01 → 15/05/01

Cite this

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title = "Challenges of high-κ gate dielectrics for future MOS devices",

abstract = "A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.",

author = "Suehle, {J. S.} and Vogel, {E. M.} and Edelstein, {M. D.} and Richter, {C. A.} and Nguyen, {N. V.} and I. Levin and Kaiser, {D. L.} and H. Wu and Bernstein, {J. B.}",

year = "2001",

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AU - Suehle, J. S.

AU - Vogel, E. M.

AU - Edelstein, M. D.

AU - Richter, C. A.

AU - Nguyen, N. V.

AU - Levin, I.

AU - Kaiser, D. L.

AU - Wu, H.

AU - Bernstein, J. B.

PY - 2001

Y1 - 2001

N2 - A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

AB - A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

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SP - 90

EP - 93

T2 - 6th International Symposium on Plasma- and Process-Induced Damage

Y2 - 13 May 2001 through 15 May 2001

ER -

Challenges of high-κ gate dielectrics for future MOS devices

Abstract

Conference

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