Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs

A. Tsukernik; D. Cheskis; O. Potashnik; A. Palevski; S. Bar-Ad; S. Luryi; A. Cho

doi:10.1007/s100510170053

Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs

A. Tsukernik, D. Cheskis, O. Potashnik, A. Palevski, S. Bar-Ad, S. Luryi, A. Cho

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Abstract

We have measured the dependence of the Fermi energy on carrier concentration in Sn doped InGaAs at 4.2 K and 300 K. At 4.2 K the Fermi energy was measured by photoluminescence spectroscopy, and at 300 K it was deduced from transport measurements of thermionic emission. In both cases the dependence of the Fermi energy on the mobile electron concentration, measured by Hall effect, strongly deviates from standard theoretical predictions, and the deviation increases with concentration. The most striking observed anomaly is the near saturation of the Fermi level when the Hall concentration exceeds 10¹⁹ cm^-3.

Original language	English
Pages (from-to)	341-344
Number of pages	4
Journal	European Physical Journal B
Volume	23
Issue number	3
DOIs	https://doi.org/10.1007/s100510170053
State	Published - 1 Oct 2001
Externally published	Yes

Keywords

73.40.-c Electronic transport in interface structures
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.40.+z Thermionic emission

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abstract = "We have measured the dependence of the Fermi energy on carrier concentration in Sn doped InGaAs at 4.2 K and 300 K. At 4.2 K the Fermi energy was measured by photoluminescence spectroscopy, and at 300 K it was deduced from transport measurements of thermionic emission. In both cases the dependence of the Fermi energy on the mobile electron concentration, measured by Hall effect, strongly deviates from standard theoretical predictions, and the deviation increases with concentration. The most striking observed anomaly is the near saturation of the Fermi level when the Hall concentration exceeds 1019 cm-3.",

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T1 - Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs

AU - Tsukernik, A.

AU - Cheskis, D.

AU - Potashnik, O.

AU - Palevski, A.

AU - Bar-Ad, S.

AU - Luryi, S.

AU - Cho, A.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - We have measured the dependence of the Fermi energy on carrier concentration in Sn doped InGaAs at 4.2 K and 300 K. At 4.2 K the Fermi energy was measured by photoluminescence spectroscopy, and at 300 K it was deduced from transport measurements of thermionic emission. In both cases the dependence of the Fermi energy on the mobile electron concentration, measured by Hall effect, strongly deviates from standard theoretical predictions, and the deviation increases with concentration. The most striking observed anomaly is the near saturation of the Fermi level when the Hall concentration exceeds 1019 cm-3.

AB - We have measured the dependence of the Fermi energy on carrier concentration in Sn doped InGaAs at 4.2 K and 300 K. At 4.2 K the Fermi energy was measured by photoluminescence spectroscopy, and at 300 K it was deduced from transport measurements of thermionic emission. In both cases the dependence of the Fermi energy on the mobile electron concentration, measured by Hall effect, strongly deviates from standard theoretical predictions, and the deviation increases with concentration. The most striking observed anomaly is the near saturation of the Fermi level when the Hall concentration exceeds 1019 cm-3.

KW - 73.40.-c Electronic transport in interface structures

KW - 73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

KW - 79.40.+z Thermionic emission

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JO - European Physical Journal B

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Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs

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