An improved reliability model for Si and GaN power FET

Keyphrases

• Failure Mechanism 100%
• Reliability Model 100%
• GaN Power FET 100%
• Increased Reliability 100%
• Failure Rate 50%
• Thermal Cycling 50%
• Wearout 50%
• Life Test 50%
• In Situ 25%
• Operating Conditions 25%
• Operational Parameters 25%
• Unified Approach 25%
• Oscillator Basis 25%
• Stress Conditions 25%
• Acceleration Factor 25%
• Device Reliability 25%
• New Theoretical Model 25%
• Semiconductor Product 25%
• Failure Prediction 25%
• Electron Beam Irradiation 25%
• Monitoring Circuit 25%
• Multi-failure 25%
• NMOS 25%
• Power MOSFET 25%
• Power Device 25%
• FPGA Device 25%
• Reliability Research 25%
• Test Circuit 25%
• Reliability Evaluation Method 25%
• Thermal Electrons 25%
• Device Lifetime 25%
• Device Failure 25%
• GaN Devices 25%
• Ring Frequency 25%
• Ring Oscillator 25%
• Applied Bias Voltage 25%
• PMOS 25%
• Gamma Irradiation 25%
• GaN FET 25%
• Rdson 25%
• LTspice Simulation 25%
• FET Devices 25%
• N-channel 25%

Engineering

• Field Effect Transistor 100%
• Failure Mechanism 66%
• Life Test 33%
• Failure Rate 33%
• Power Device 16%
• Bias Voltage 16%
• Acceleration Factor 16%
• Metal-Oxide-Semiconductor Field-Effect Transistor 16%
• Field Programmable Gate Arrays 16%
• Reliability Evaluation 16%
• Reliability Standard 16%
• Test Circuit 16%
• Shortfall 16%
• Oscillator 16%