Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides

J. S. Suehle; B. Zhu; Y. Che; J. B. Bernstein

Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides

J. S. Suehle, B. Zhu, Y. Che, J. B. Bernstein

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

Two post soft breakdown modes are studied: one in which the conducting filament is stable until hard breakdown occurs and one in which the filament continually degrades with time. Acceleration factors are different for each mode, indicating different physical mechanisms. The results suggest that the "hardness" of the first breakdown influences the residual time distribution of the following hard breakdown. Tunneling current appears to be the driving force for both modes.

Original language	English
Pages (from-to)	95-101
Number of pages	7
Journal	IEEE International Reliability Physics Symposium Proceedings
State	Published - 2004
Externally published	Yes
Event	42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States Duration: 25 Apr 2004 → 29 Apr 2004

Keywords

CMOS
Dielectric breakdown
Oxide reliability
Silicon dioxide

Cite this

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AU - Che, Y.

AU - Bernstein, J. B.

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AB - Two post soft breakdown modes are studied: one in which the conducting filament is stable until hard breakdown occurs and one in which the filament continually degrades with time. Acceleration factors are different for each mode, indicating different physical mechanisms. The results suggest that the "hardness" of the first breakdown influences the residual time distribution of the following hard breakdown. Tunneling current appears to be the driving force for both modes.

KW - CMOS

KW - Dielectric breakdown

KW - Oxide reliability

KW - Silicon dioxide

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Y2 - 25 April 2004 through 29 April 2004

ER -

Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides

Abstract

Keywords

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