A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe

S. E. Schacham; E. Finkman

doi:10.1063/1.334561

A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe

S. E. Schacham, E. Finkman

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Abstract

A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg _0.71Cd_0.29Te was measured for the temperature range of 78-256 K.

Original language	English
Pages (from-to)	1161-1164
Number of pages	4
Journal	Journal of Applied Physics
Volume	57
Issue number	4
DOIs	https://doi.org/10.1063/1.334561
State	Published - 1985
Externally published	Yes

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abstract = "A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg 0.71Cd0.29Te was measured for the temperature range of 78-256 K.",

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AB - A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg 0.71Cd0.29Te was measured for the temperature range of 78-256 K.

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A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe

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