A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe

S. E. Schacham; E. Finkman

doi:10.1063/1.334561

A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe

S. E. Schacham, E. Finkman

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Abstract

A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg _0.71Cd_0.29Te was measured for the temperature range of 78-256 K.

Original language	English
Pages (from-to)	1161-1164
Number of pages	4
Journal	Journal of Applied Physics
Volume	57
Issue number	4
DOIs	https://doi.org/10.1063/1.334561
State	Published - 1985
Externally published	Yes

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@article{2b8a1098266b4f8d8a35244e0211804f,

title = "A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe",

abstract = "A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg 0.71Cd0.29Te was measured for the temperature range of 78-256 K.",

author = "Schacham, {S. E.} and E. Finkman",

year = "1985",

doi = "10.1063/1.334561",

language = "אנגלית",

volume = "57",

pages = "1161--1164",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe

AU - Schacham, S. E.

AU - Finkman, E.

PY - 1985

Y1 - 1985

N2 - A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg 0.71Cd0.29Te was measured for the temperature range of 78-256 K.

AB - A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg 0.71Cd0.29Te was measured for the temperature range of 78-256 K.

UR - http://www.scopus.com/inward/record.url?scp=0022011503&partnerID=8YFLogxK

U2 - 10.1063/1.334561

DO - 10.1063/1.334561

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0022011503

SN - 0021-8979

VL - 57

SP - 1161

EP - 1164

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe

Abstract

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