Abstract
Some applications are presented for implementing a novel laser-programmable interconnect element (MakeLink™) formed vertically between two standard metallization layers. The average electrical resistance for the smallest link is less than 10Ω at optimal laser energy. Life tests under accelerating DC current densities and temperatures indicated high electromigration reliability. This technology is shown to be scaleable down to 1.5μm pitch based on commercially available laser systems. Finite element models of various structures were simulated and the results show that there exists an acceptable process window for any scaled link. Properties such as standard CMOS process compatibility, no programming circuit, high current handling capability, hermeticity and radiation hardness, make it useful in customizable devices and to replace laser fuses for yield enhancement and other rapid customization applications.
| Original language | English |
|---|---|
| Pages (from-to) | 347-350 |
| Number of pages | 4 |
| Journal | IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings |
| State | Published - 2001 |
| Externally published | Yes |
| Event | IEEE International Symposium on Semiconductor Manufacturing (ISSIM) 2001 - San Jose, CA, United States Duration: 8 Oct 2001 → 10 Oct 2001 |