Validation of simulated integrated circuit reliability in conjunction with field data

Avshalom Hava, Jin Qin, Joseph B. Bernstein

نتاج البحث: فصل من :كتاب / تقرير / مؤتمرمنشور من مؤتمرمراجعة النظراء

2 اقتباسات (Scopus)

ملخص

A thorough reliability analysis of integrated circuit field failure data, recorded from 2002 to 2009, is utilized in order to generate real failure rates for various device process technologies and feature sizes (or "technology nodes"). The results of this analysis are used to verify Physics-of-Failure (PoF) models and a competing failure approach, as implemented in a new reliability prediction methods - FaRBS (Failure Rate Based Simulation Program with Integrated Circuit Emphasis). Comparison of the simulated and the actual field failure rates demonstrate that the simulation agrees very well with the field failure and a strong correlation of 80% is achieved.

اللغة الأصليةالإنجليزيّة
عنوان منشور المضيفProceedings of the 2011 - Grand Challenges in Modeling and Simulation Conference, GCMS 2011
الصفحات362-369
عدد الصفحات8
حالة النشرنُشِر - 2011
منشور خارجيًانعم
الحدث4th Grand Challenges in Modeling and Simulation Conference, GCMS 2011 - The Hague, هولندا
المدة: ٢٧ يونيو ٢٠١١٣٠ يونيو ٢٠١١

سلسلة المنشورات

الاسمProceedings of the 2011 - Grand Challenges in Modeling and Simulation Conference, GCMS 2011

!!Conference

!!Conference4th Grand Challenges in Modeling and Simulation Conference, GCMS 2011
الدولة/الإقليمهولندا
المدينةThe Hague
المدة٢٧/٠٦/١١٣٠/٠٦/١١

بصمة

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