Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector

Asaf Albo; Dan Fekete; Gad Bahir

doi:10.1002/pssc.200778741

Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector

Asaf Albo
, Dan Fekete
, Gad Bahir

نتاج البحث: نشر في مجلة › مقالة من مؤنمر › مراجعة النظراء

4 اقتباسات (Scopus)

ملخص

We report observation of unpolarized intersubband photocurrent (PC) in quantum-well infrared photodetector (QWIP) based on Te doped GaInAsN/AlGaAs multiple-quantum well structures (MQWs). The unpolraized photocurrent spectrum is peaked at 2.4 μm in front and wedge waveguide configuration illumination. Clear PC signals are observed up to room temperature. Reference sample not containing nitrogen with the same MQW structure shows p polarized intersubband photoresponse as expected in the conduction band of III-V semiconductors MQWs.

اللغة الأصلية	الإنجليزيّة
الصفحات (من إلى)	2323-2325
عدد الصفحات	3
دورية	Physica Status Solidi (C) Current Topics in Solid State Physics
مستوى الصوت	5
رقم الإصدار	6
المعرِّفات الرقمية للأشياء	https://doi.org/10.1002/pssc.200778741
حالة النشر	نُشِر - 2008
منشور خارجيًا	نعم
الحدث	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, الولايات المتّحدة المدة: 16 سبتمبر 2007 → 21 سبتمبر 2007

الوصول إلى المستند

10.1002/pssc.200778741

الملفات والروابط الأخرى

Link to publication in Scopus

قم بذكر هذا

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title = "Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector",

abstract = "We report observation of unpolarized intersubband photocurrent (PC) in quantum-well infrared photodetector (QWIP) based on Te doped GaInAsN/AlGaAs multiple-quantum well structures (MQWs). The unpolraized photocurrent spectrum is peaked at 2.4 μm in front and wedge waveguide configuration illumination. Clear PC signals are observed up to room temperature. Reference sample not containing nitrogen with the same MQW structure shows p polarized intersubband photoresponse as expected in the conduction band of III-V semiconductors MQWs.",

author = "Asaf Albo and Dan Fekete and Gad Bahir",

year = "2008",

doi = "10.1002/pssc.200778741",

language = "אנגלית",

volume = "5",

pages = "2323--2325",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

}

TY - JOUR

T1 - Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector

AU - Albo, Asaf

AU - Fekete, Dan

AU - Bahir, Gad

PY - 2008

Y1 - 2008

N2 - We report observation of unpolarized intersubband photocurrent (PC) in quantum-well infrared photodetector (QWIP) based on Te doped GaInAsN/AlGaAs multiple-quantum well structures (MQWs). The unpolraized photocurrent spectrum is peaked at 2.4 μm in front and wedge waveguide configuration illumination. Clear PC signals are observed up to room temperature. Reference sample not containing nitrogen with the same MQW structure shows p polarized intersubband photoresponse as expected in the conduction band of III-V semiconductors MQWs.

AB - We report observation of unpolarized intersubband photocurrent (PC) in quantum-well infrared photodetector (QWIP) based on Te doped GaInAsN/AlGaAs multiple-quantum well structures (MQWs). The unpolraized photocurrent spectrum is peaked at 2.4 μm in front and wedge waveguide configuration illumination. Clear PC signals are observed up to room temperature. Reference sample not containing nitrogen with the same MQW structure shows p polarized intersubband photoresponse as expected in the conduction band of III-V semiconductors MQWs.

UR - https://www.scopus.com/pages/publications/62149088620

U2 - 10.1002/pssc.200778741

DO - 10.1002/pssc.200778741

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AN - SCOPUS:62149088620

SN - 1862-6351

VL - 5

SP - 2323

EP - 2325

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector

ملخص

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