Ultra-fast characterization of transient gate oxide trapping in SiC MOSFETs

Keyphrases

• Voltage-current 100%
• Gate Oxide 100%
• DC Measurements 100%
• Threshold Voltage 100%
• Fast I-V 100%
• I-V Measurement 100%
• SiC MOSFET 100%
• Current Instability 100%
• Drain Current 100%
• Ultrafast Characterization 100%
• Oxide Traps 100%
• Silica 50%
• Physical Model 50%
• Most Important Issue 50%
• Fast Transient 50%
• Passivated 50%
• Fast Measurement 50%
• Transient Charge 50%
• Bias Stress Effect 50%
• Positive Bias Stress 50%
• Charge Trapping 50%
• Normal Operation Condition 50%
• SiC Power MOSFET 50%
• Negative Bias Stress 50%
• Post-oxidation Annealing 50%
• Charge Detrapping 50%
• 4H-SiC MOSFET 50%

Engineering

• Transients 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Oxide 100%
• Current Drain 66%
• Physical Model 33%
• Fast Transient 33%
• Silicon Dioxide 33%