@inproceedings{1bc5b6a481174863b224a124e213c5dc,
title = "The Correct Hot Carrier Degradation Model",
abstract = "A model for the apparent negative activation energy that is observed when measuring hot carrier degradation has alluded the reliability physics community for several decades. The phenomenon is observed from changes in threshold voltage and mobility degradation and has been distinct from negative bias temperature instability (NBTI) in that the effect consistently increases with lower temperature. This effect is so consistent that an actual negative activation energy can be measured and has been reported from -0.1 to -0.4eV. We propose a model that considers the energetics of HCI that allows the mechanism to be modeled consistently for Silicon and GaN.",
keywords = "FinFET, GaN, HCI, PoF, Reliability Engineering",
author = "Bernstein, \{J. B.\} and E. Bender and A. Bensoussan",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 61st IEEE International Reliability Physics Symposium, IRPS 2023 ; Conference date: 26-03-2023 Through 30-03-2023",
year = "2023",
doi = "10.1109/IRPS48203.2023.10117881",
language = "אנגלית",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings",
address = "ארצות הברית",
}