ملخص
We present a so-called "split-well direct-phonon" active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs.
اللغة الأصلية | الإنجليزيّة |
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رقم المقال | 191102 |
دورية | Applied Physics Letters |
مستوى الصوت | 114 |
رقم الإصدار | 19 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | نُشِر - 13 مايو 2019 |
منشور خارجيًا | نعم |