ملخص
An analysis methodology for charge pumping (CP) measurements was developed and applied to extract spatial distributions of traps in SiO2HfO2 gate stacks. This analysis indicates that the traps accessible by CP measurements in the frequency range down to a few kilohertz are located primarily within the SiO2 layer and HfO2 SiO2 interface region. The trap density in the SiO2 layer increases closer to the high-κ dielectric, while the trap spatial profile as a function of the distance from the high-κ film was found to be dependent on high-κ film characteristics. These results point to interactions with the high-κ dielectric as a cause of trap generation in the interfacial SiO2 layer.
اللغة الأصلية | الإنجليزيّة |
---|---|
الصفحات (من إلى) | 1338-1345 |
عدد الصفحات | 8 |
دورية | IEEE Transactions on Electron Devices |
مستوى الصوت | 54 |
رقم الإصدار | 6 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | نُشِر - يونيو 2007 |
منشور خارجيًا | نعم |