TY - GEN
T1 - Simulating and improving microelectronic device reliability by scaling voltage and temperature
AU - Li, Xiaojun
AU - Walter, Joerg D.
AU - Bernstein, Joseph B.
PY - 2005
Y1 - 2005
N2 - The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring oscillator under different stress conditions to determine the accurate scaling relations of these operating parameters. Reduced voltage, frequency and temperature applied to a device will reduce its internal stresses, leading to an improvement of device reliability. Since all these variations for a single device are proportional, the ratios can be applied to a full circuit and help to simplify the derating model and formulate practical design guidelines for system developers to derate devices for long life applications.
AB - The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring oscillator under different stress conditions to determine the accurate scaling relations of these operating parameters. Reduced voltage, frequency and temperature applied to a device will reduce its internal stresses, leading to an improvement of device reliability. Since all these variations for a single device are proportional, the ratios can be applied to a full circuit and help to simplify the derating model and formulate practical design guidelines for system developers to derate devices for long life applications.
UR - http://www.scopus.com/inward/record.url?scp=33748102204&partnerID=8YFLogxK
U2 - 10.1109/ISQED.2005.110
DO - 10.1109/ISQED.2005.110
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AN - SCOPUS:33748102204
SN - 0769523013
SN - 9780769523019
T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED
SP - 496
EP - 502
BT - Proceedings - 6th International Symposium on Quality Electronic Design, ISQED 2005
T2 - 6th International Symposium on Quality Electronic Design, ISQED 2005
Y2 - 21 March 2005 through 23 March 2005
ER -