Self-heating Effects Measured in Fully Packaged FinFET Devices

E. Bender, J. B. Bernstein

نتاج البحث: فصل من :كتاب / تقرير / مؤتمرمنشور من مؤتمرمراجعة النظراء

2 اقتباسات (Scopus)

ملخص

A unique, resource efficient method for finding the impact of Self-heating Effects (SHE) in packaged FinFET devices is presented in this work. Device level concerns seen in reliability degradation and system level issues with power dissipation are inspected using separate measuring techniques. We show that a frequency effect observed in reliability is attributed to self-heating of the Fins during device transition. The increase in temperature due to current induced self-heating was measured up to 1 GHz and extrapolated to 3 GHz. Temperature rise of the total chip caused by dynamic power dissipation is evaluated. The self-heating contribution is assessed by finding the relative thermal offset from increased frequency compared to that of added logic. A significant correlation is revealed from evaluating the device and system level studies. The method can be easily performed on smaller dimension nodes where the effects of SHE are more acute.

اللغة الأصليةالإنجليزيّة
عنوان منشور المضيف2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings
ناشرInstitute of Electrical and Electronics Engineers Inc.
الصفحات65-68
عدد الصفحات4
رقم المعيار الدولي للكتب (الإلكتروني)9781665445283
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 12 سبتمبر 2021
الحدث32nd IEEE International Conference on Microelectronics, MIEL 2021 - Nis, صربيا
المدة: ١٢ سبتمبر ٢٠٢١١٤ سبتمبر ٢٠٢١

سلسلة المنشورات

الاسمProceedings of the International Conference on Microelectronics, ICM
مستوى الصوت2021-September

!!Conference

!!Conference32nd IEEE International Conference on Microelectronics, MIEL 2021
الدولة/الإقليمصربيا
المدينةNis
المدة١٢/٠٩/٢١١٤/٠٩/٢١

بصمة

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