Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress

Keyphrases

• Constant Voltage 100%
• Tunneling 100%
• Hot Electrons 100%
• Silicon Dioxide 100%
• Ultrathin Silicon 100%
• Combined Substrate 100%
• Hot Electron Stress 50%
• Gate Current 33%
• Time to Breakdown 33%
• Silica 16%
• Current Density 16%
• Ultrathin 16%
• Injected Voltage 16%
• Charge Pump 16%
• Ultrathin Oxide 16%
• Defect Generation 16%
• Silicon Oxide 16%
• Current Pumping 16%
• Gate Bias 16%
• Hot Electron Injection 16%
• Substrate Bias 16%
• Electrical Stress 16%
• Stress Induced Leakage Current 16%
• Thickness Dependence 16%
• Coherent Understanding 16%
• Breakdown Behavior 16%

Material Science

• Silicon Dioxide 100%
• Hot Electron 100%
• Oxide Compound 28%
• Density 14%
• Silicon 14%