Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress

Eric M. Vogel, John S. Suehle, Monica D. Edelstein, Bin Wang, Yuan Chen, Joseph B. Bernstein

نتاج البحث: نشر في مجلةمقالةمراجعة النظراء

55 اقتباسات (Scopus)

ملخص

An experimental investigation of breakdown and defect generation under combined substrate hot-electron and tunneling electrical stress of silicon oxide ranging in thickness from 2.0 nm to 3.5 nm is reported. Using independent control of the gate current for a given substrate and gate bias, the time-to-breakdown of ultrathin silicon dioxide under substrate hot-electron stress is observed to be inversely proportional to the gate current density. The thickness dependence (2.0 nm to 3.5 nm) of substrate hot-electron reliability is reported and shown to be similar to constant voltage tunneling stress. The build-up of defects measured using stress-induced-leakage current and charge-pumping for both tunneling and substrate hot-electron stress is reported. Based on these and previous results, a model is proposed to explain the time-to-breakdown behavior of ultrathin oxide under simultaneous tunneling and substrate hot-electron stress. The results and model provide a coherent understanding for describing the reliability of ultrathin SiO2 under combined substrate hot-electron injection and constant voltage tunneling stress.

اللغة الأصليةالإنجليزيّة
الصفحات (من إلى)1183-1191
عدد الصفحات9
دوريةIEEE Transactions on Electron Devices
مستوى الصوت47
رقم الإصدار6
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 2000
منشور خارجيًانعم

بصمة

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