ملخص
An experimental investigation of breakdown and defect generation under combined substrate hot-electron and tunneling electrical stress of silicon oxide ranging in thickness from 2.0 nm to 3.5 nm is reported. Using independent control of the gate current for a given substrate and gate bias, the time-to-breakdown of ultrathin silicon dioxide under substrate hot-electron stress is observed to be inversely proportional to the gate current density. The thickness dependence (2.0 nm to 3.5 nm) of substrate hot-electron reliability is reported and shown to be similar to constant voltage tunneling stress. The build-up of defects measured using stress-induced-leakage current and charge-pumping for both tunneling and substrate hot-electron stress is reported. Based on these and previous results, a model is proposed to explain the time-to-breakdown behavior of ultrathin oxide under simultaneous tunneling and substrate hot-electron stress. The results and model provide a coherent understanding for describing the reliability of ultrathin SiO2 under combined substrate hot-electron injection and constant voltage tunneling stress.
اللغة الأصلية | الإنجليزيّة |
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الصفحات (من إلى) | 1183-1191 |
عدد الصفحات | 9 |
دورية | IEEE Transactions on Electron Devices |
مستوى الصوت | 47 |
رقم الإصدار | 6 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | نُشِر - 2000 |
منشور خارجيًا | نعم |