Power-Law Time Exponent n and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction–Diffusion Theory

Keyphrases

• Bias Temperature Instability 100%
• Time Exponent 100%
• Dependent Stress 50%
• SiC Converter 50%
• Threshold Voltage Measurement 50%
• Negative Gate Bias 50%
• SiC Technology 50%
• Instability Model 50%

Engineering

• Clear Increase 50%