TY - GEN
T1 - Photoinduced Currents (Nanoamperes) at Single Crystalline Cadmium Telluride Surfaces Analyzed at Ambient by Scanning Tunneling Microscopy
AU - Golan, G.
AU - Azoulay, M.
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Scanning Tunneling Microscopy (STM) is being employed to study photoexcited charged carriers at semiconductors surfaces. However, so far, the investigation was limited to relatively low resistivity materials, and the experimental setup was placed within an Ultra High Vacuum (UHV) chamber. In the current research, we were able to carry out photo assisted STM analysis at ambient on well-determined cadmium telluride single crystalline surfaces with high resistivity of about 107 Ω•cm, oriented to the (111) Cd, (111) Te and (110) cleaved surface. The recorded data was found to be in good agreement with the published results that were achieved by surface photo-voltage spectroscopy. Such information may be useful as an effective characterization method for materials prior to the fabrication of wide band-gap semiconductor detectors.
AB - Scanning Tunneling Microscopy (STM) is being employed to study photoexcited charged carriers at semiconductors surfaces. However, so far, the investigation was limited to relatively low resistivity materials, and the experimental setup was placed within an Ultra High Vacuum (UHV) chamber. In the current research, we were able to carry out photo assisted STM analysis at ambient on well-determined cadmium telluride single crystalline surfaces with high resistivity of about 107 Ω•cm, oriented to the (111) Cd, (111) Te and (110) cleaved surface. The recorded data was found to be in good agreement with the published results that were achieved by surface photo-voltage spectroscopy. Such information may be useful as an effective characterization method for materials prior to the fabrication of wide band-gap semiconductor detectors.
UR - http://www.scopus.com/inward/record.url?scp=85183816562&partnerID=8YFLogxK
U2 - 10.1109/MIEL58498.2023.10315846
DO - 10.1109/MIEL58498.2023.10315846
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AN - SCOPUS:85183816562
T3 - 2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023
BT - 2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 33rd IEEE International Conference on Microelectronics, MIEL 2023
Y2 - 16 October 2023 through 18 October 2023
ER -