Photoconductivity of Ge/Si quantum dot photodetectors

N. Rappaport, E. Finkman, P. Boucaud, S. Sauvage, T. Brunhes, V. Le Thanh, D. Bouchier, S. E. Schacham

نتاج البحث: نشر في مجلةمقالةمراجعة النظراء

11 اقتباسات (Scopus)

ملخص

Various structures of self-assembled Ge/Si quantum dot infrared photodetectors were implemented and investigated. The electronic structure of the QDIPs was studied by electrical and optical techniques including I-V characteristics, dark current, photoconductivity, photoluminescence, and photo-induced infrared absorption. The photoconductive spectra consist of a broad multi-peak, composed of peaks ranging from 70 to 220 meV. Their relative intensity changes with bias. Comparative dark current measurements were performed. Dark current limits the performance of this first generation of Ge/ Si QDIPs. It is plausible that direct doping in the dot layer is a viable way of reducing the dark current.

اللغة الأصليةالإنجليزيّة
الصفحات (من إلى)513-516
عدد الصفحات4
دوريةInfrared Physics and Technology
مستوى الصوت44
رقم الإصدار5-6
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 2003

بصمة

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