p-channel MIS double-metal process InSb monolithic unit cell for infrared imaging

Avishai Kepten, Yosef Y. Shacham-Diamand, S. E. Schacham

نتاج البحث: فصل من :كتاب / تقرير / مؤتمرمنشور من مؤتمرمراجعة النظراء

4 اقتباسات (Scopus)

ملخص

A new approach to the fabrication of monolithic infrared focal plane arrays is presented and examined in this paper. The array is based on photovoltaic diodes, parallel integration capacitors, and MIS field effect transistors (FET). The photodiode is connected directly to the integrating capacitor while the MISFET serves as a pass gate to the video line. This configuration is operated in the pseudo-staring mode. The array was implemented in InSb, in a process based on a new passivation in which a photo chemical oxidation of InSb is followed by a conventional photo chemical SiO2 growth. A two-level metallization process was developed serving both for electrical connection and optical coverage. Two configurations were tested for the layout of the two metal layers. In addition, the lower metallization was implemented in Cr, Ti, and Al. The optimal structure is a planar array with Cr as the first metal layer which forms the source and drain contacts.

اللغة الأصليةالإنجليزيّة
عنوان منشور المضيفProceedings of SPIE - The International Society for Optical Engineering
الصفحات305-316
عدد الصفحات12
حالة النشرنُشِر - 1992
منشور خارجيًانعم
الحدثInfrared Detectors and Focal Plane Arrays II - Orlando, FL, USA
المدة: ٢٣ أبريل ١٩٩٢٢٤ أبريل ١٩٩٢

سلسلة المنشورات

الاسمProceedings of SPIE - The International Society for Optical Engineering
مستوى الصوت1685
رقم المعيار الدولي للدوريات (المطبوع)0277-786X

!!Conference

!!ConferenceInfrared Detectors and Focal Plane Arrays II
المدينةOrlando, FL, USA
المدة٢٣/٠٤/٩٢٢٤/٠٤/٩٢

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