TY - GEN
T1 - Optimization in Vacuum Photothermal Processing (VPP)
AU - Axelevitch, A.
AU - Golan, G.
AU - Gorenstein, B.
PY - 2005
Y1 - 2005
N2 - Recent development in RTP enables the expansion of synergetic influence of electron flux and non-coherent light, mainly from UV and VUV spectrum, on treated samples. This expansion is called Vacuum Photothermal Processing (VPP). The treatment consists of a simultaneous irradiation of samples with electron flux and non-coherent light produced by a heated tungsten coil in vacuum. This paper presents studies of the influence of VPP on the interface between silicon substrates and metal coatings deposited on top of it. It was found that VPP provides for stabilizing the deposited coatings, improves homogeneity and curing the irreversible electrical breakdown in thin-film systems; it also improves the roughness of interfaces between semiconductor and metal coatings. These modifications and improvements are explained by the appearance of an intermediate layer which is made up while VPP and passivaites the interface. This built-in layer, produced during VPP treatment, was discovered and is shown in this study.
AB - Recent development in RTP enables the expansion of synergetic influence of electron flux and non-coherent light, mainly from UV and VUV spectrum, on treated samples. This expansion is called Vacuum Photothermal Processing (VPP). The treatment consists of a simultaneous irradiation of samples with electron flux and non-coherent light produced by a heated tungsten coil in vacuum. This paper presents studies of the influence of VPP on the interface between silicon substrates and metal coatings deposited on top of it. It was found that VPP provides for stabilizing the deposited coatings, improves homogeneity and curing the irreversible electrical breakdown in thin-film systems; it also improves the roughness of interfaces between semiconductor and metal coatings. These modifications and improvements are explained by the appearance of an intermediate layer which is made up while VPP and passivaites the interface. This built-in layer, produced during VPP treatment, was discovered and is shown in this study.
UR - http://www.scopus.com/inward/record.url?scp=48349091037&partnerID=8YFLogxK
U2 - 10.1109/RTP.2005.1613713
DO - 10.1109/RTP.2005.1613713
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AN - SCOPUS:48349091037
SN - 078039223X
SN - 9780780392236
T3 - 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005
SP - 219
EP - 223
BT - 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005
T2 - 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005
Y2 - 4 October 2005 through 7 October 2005
ER -