ملخص
A novel sputtering method based on a triode-sputtering set-up is presented. This low-vacuum plasma method enables sputtering of thin films at a pressure range 0.2-5mTorr, using a supported gas discharge. The new method is capable of an independent control of the sputtering rate vs. sputtering voltage. Temperature distribution of electrons in the plasma was experimentally studied, using the Langmuir probe. Experimental sputtering results of Ti and Si layers, using this method, are described.
اللغة الأصلية | الإنجليزيّة |
---|---|
الصفحات (من إلى) | 651-657 |
عدد الصفحات | 7 |
دورية | Microelectronics Journal |
مستوى الصوت | 33 |
رقم الإصدار | 8 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | نُشِر - أغسطس 2002 |
منشور خارجيًا | نعم |