Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach; E. Gross; C. Y. Huang; Y. D. Lin; A. Vardi; S. E. Schacham; S. Nakamura; G. Bahir

doi:10.1063/1.4813395

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach
, E. Gross
, C. Y. Huang
, Y. D. Lin
, A. Vardi
, S. E. Schacham
, S. Nakamura
, G. Bahir

Department of Electrical and Electronics Engineering

نتاج البحث: نشر في مجلة › مقالة › مراجعة النظراء

42 اقتباسات (Scopus)

ملخص

We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔE_c:ΔE _v) of 57:43 for In_0.1Ga_0.9N/GaN and 55:45, for In_0.095GA_0.905N/Al_0.07Ga_0.93N non-polar m-plane multi-quantum well structures.

اللغة الأصلية	الإنجليزيّة
رقم المقال	022110
دورية	Applied Physics Letters
مستوى الصوت	103
رقم الإصدار	2
المعرِّفات الرقمية للأشياء	https://doi.org/10.1063/1.4813395
حالة النشر	نُشِر - 8 يوليو 2013

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10.1063/1.4813395

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Link to publication in Scopus

قم بذكر هذا

@article{53f600499c904d358000eb45fa87f8af,

title = "Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors",

abstract = "We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schr{\"o}dinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.",

author = "A. Pesach and E. Gross and Huang, \{C. Y.\} and Lin, \{Y. D.\} and A. Vardi and Schacham, \{S. E.\} and S. Nakamura and G. Bahir",

note = "Funding Information: The authors acknowledge partial financial support by the EC FET OPEN “Unitride” Grant No. 233950. The authors would like to thank Dr. S. Sakr, Dr. F. J. Julien, and Dr. E. Monroy for their help throughout this work. The MQW structures were grown at “University of California, Santa Barbara.” ",

year = "2013",

month = jul,

day = "8",

doi = "10.1063/1.4813395",

language = "אנגלית",

volume = "103",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

AU - Pesach, A.

AU - Gross, E.

AU - Huang, C. Y.

AU - Lin, Y. D.

AU - Vardi, A.

AU - Schacham, S. E.

AU - Nakamura, S.

AU - Bahir, G.

N1 - Funding Information: The authors acknowledge partial financial support by the EC FET OPEN “Unitride” Grant No. 233950. The authors would like to thank Dr. S. Sakr, Dr. F. J. Julien, and Dr. E. Monroy for their help throughout this work. The MQW structures were grown at “University of California, Santa Barbara.”

PY - 2013/7/8

Y1 - 2013/7/8

N2 - We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

AB - We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

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DO - 10.1063/1.4813395

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AN - SCOPUS:84880498345

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022110

ER -

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

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