Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

Qin Jin; Joseph B. Bernstein

doi:10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

Qin Jin
, Joseph B. Bernstein

نتاج البحث: فصل من :كتاب / تقرير / مؤتمر › منشور من مؤتمر › مراجعة النظراء

17 اقتباسات (Scopus)

ملخص

In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.

اللغة الأصلية	الإنجليزيّة
عنوان منشور المضيف	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
ناشر	Institute of Electrical and Electronics Engineers Inc.
الصفحات	93-97
عدد الصفحات	5
رقم المعيار الدولي للكتب (المطبوع)	1424402964, 9781424402960
المعرِّفات الرقمية للأشياء	https://doi.org/10.1109/IRWS.2006.305219
حالة النشر	نُشِر - 2006
منشور خارجيًا	نعم
الحدث	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW - South Lake Tahoe, CA, الولايات المتّحدة المدة: 16 أكتوبر 2006 → 19 أكتوبر 2006

سلسلة المنشورات

الاسم	IEEE International Integrated Reliability Workshop Final Report
رقم المعيار الدولي للدوريات (المطبوع)	1930-8841
رقم المعيار الدولي للدوريات (الإلكتروني)	2374-8036

!!Conference

!!Conference	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
الدولة/الإقليم	الولايات المتّحدة
المدينة	South Lake Tahoe, CA
المدة	16/10/06 → 19/10/06

الوصول إلى المستند

10.1109/IRWS.2006.305219

الملفات والروابط الأخرى

Link to publication in Scopus

قم بذكر هذا

Jin, Q., & Bernstein, J. B. (2006). Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. في 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW (الصفحات 93-97). المقال 4098696 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2006.305219

Jin, Qin ; Bernstein, Joseph B. / Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc., 2006. الصفحات 93-97 (IEEE International Integrated Reliability Workshop Final Report).

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title = "Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms",

abstract = "In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.",

author = "Qin Jin and Bernstein, \{Joseph B.\}",

year = "2006",

doi = "10.1109/IRWS.2006.305219",

language = "אנגלית",

isbn = "1424402964",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "93--97",

booktitle = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW",

address = "ארצות הברית",

note = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW ; Conference date: 16-10-2006 Through 19-10-2006",

}

Jin, Q & Bernstein, JB 2006, Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. في 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW., 4098696, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., الصفحات 93-97, 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW, South Lake Tahoe, CA, الولايات المتّحدة, 16/10/06. https://doi.org/10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. / Jin, Qin; Bernstein, Joseph B.
2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc., 2006. صفحة 93-97 4098696 (IEEE International Integrated Reliability Workshop Final Report).

نتاج البحث: فصل من :كتاب / تقرير / مؤتمر › منشور من مؤتمر › مراجعة النظراء

TY - GEN

T1 - Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

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AU - Bernstein, Joseph B.

PY - 2006

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N2 - In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.

AB - In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.

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AN - SCOPUS:41649116868

SN - 1424402964

SN - 9781424402960

T3 - IEEE International Integrated Reliability Workshop Final Report

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BT - 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 16 October 2006 through 19 October 2006

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Jin Q, Bernstein JB. Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. في 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc. 2006. صفحة 93-97. 4098696. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

ملخص

سلسلة المنشورات

!!Conference

الوصول إلى المستند

الملفات والروابط الأخرى

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