TY - JOUR
T1 - Metal-insulator phase transition in vanadium oxides films
AU - Golan, G.
AU - Axelevitch, A.
AU - Sigalov, B.
AU - Gorenstein, B.
PY - 2003/4
Y1 - 2003/4
N2 - Vanadium oxide films (VO2) are of a typical phase transition ranging between metal phase to a semi-conducting phase. The theoretical metamorphose temperature of VO2 is around 340K (67°C). This transition temperature is mostly governed by the deposition method in which the film was made, and the film's composition. Optical and electrical properties of VO2 films are dramatically changed during this phase transition, thus making it useful in many microelectronics and optoelectronics applications. In this work we evaluate several deposition methods of VO2 and their relations to the electro-optics properties of such films. The examined VO2 films consisted of various phases of the material. Best films to demonstrate a metal-insulator transition were made in vacuum evaporation of V powder in a tungsten boat, treated in argon-oxygen flow (10:1), at 400°C. The temperature range of phase transitions was found at 16-80°C. Resistivity changes and colors of the films were studied as well.
AB - Vanadium oxide films (VO2) are of a typical phase transition ranging between metal phase to a semi-conducting phase. The theoretical metamorphose temperature of VO2 is around 340K (67°C). This transition temperature is mostly governed by the deposition method in which the film was made, and the film's composition. Optical and electrical properties of VO2 films are dramatically changed during this phase transition, thus making it useful in many microelectronics and optoelectronics applications. In this work we evaluate several deposition methods of VO2 and their relations to the electro-optics properties of such films. The examined VO2 films consisted of various phases of the material. Best films to demonstrate a metal-insulator transition were made in vacuum evaporation of V powder in a tungsten boat, treated in argon-oxygen flow (10:1), at 400°C. The temperature range of phase transitions was found at 16-80°C. Resistivity changes and colors of the films were studied as well.
KW - Metal-insulator phase transition
KW - Thin color films
KW - Vanadium oxide
UR - http://www.scopus.com/inward/record.url?scp=0037379628&partnerID=8YFLogxK
U2 - 10.1016/S0026-2692(03)00002-8
DO - 10.1016/S0026-2692(03)00002-8
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AN - SCOPUS:0037379628
SN - 0026-2692
VL - 34
SP - 255
EP - 258
JO - Microelectronics Journal
JF - Microelectronics Journal
IS - 4
ER -