Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation

Bin Wang, J. S. Suehle, E. M. Vogel, J. R. Conley, C. E. Weintraub, A. H. Johnston, J. B. Bernstein

نتاج البحث: نتاج بحثي من مؤتمرمحاضرةمراجعة النظراء

7 اقتباسات (Scopus)

ملخص

We studied the effects of heavy ion and γ-ray irradiation on radiation-induced leakage current (RILC) and time-dependent dielectric breakdown (TDDB) life distributions of ultra-thin oxides (<3.5 nm). Thermal annealing experiments were carried out on irradiated devices to study the nature of RILC. TDDB experiments were also performed on irradiated devices with thermal annealing. Our results show that gamma irradiation had a minimal effect on intrinsic TDDB lifetime of ultra-thin oxides. However, heavy ion irradiation induced RILC and substantially reduced the lifetime of ultra-thin oxide films. Thermal annealing experiments suggests that RILC is due to trapped holes. Removal of RILC (and holes) do not improve TDDB lifetime.

اللغة الأصليةالإنجليزيّة
الصفحات16-19
عدد الصفحات4
حالة النشرنُشِر - 2001
منشور خارجيًانعم
الحدث2001 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, الولايات المتّحدة
المدة: ١٥ أكتوبر ٢٠٠١١٨ أكتوبر ٢٠٠١

!!Conference

!!Conference2001 IEEE International Integrated Reliability Workshop Final Report
الدولة/الإقليمالولايات المتّحدة
المدينةLake Tahoe, CA
المدة١٥/١٠/٠١١٨/١٠/٠١

بصمة

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