TY - GEN
T1 - Laser programmable metallic vias
AU - Bernstein, Joseph B.
AU - Zhang, Wei
AU - Nicholas, Carl H.
N1 - Publisher Copyright:
© 1998 IEEE.
PY - 1998
Y1 - 1998
N2 - Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This process of laser via formation has successfully made connections with resistances of <0.8 ω. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100,000 individual links over a wide set of laser parameters without failure. This technology provides the yield and reliability necessary for fabrication of rapid turnaround MCM-D, wafer scale integration (WSI), and system-on-A-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy for programming high current power and ground lines.
AB - Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This process of laser via formation has successfully made connections with resistances of <0.8 ω. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100,000 individual links over a wide set of laser parameters without failure. This technology provides the yield and reliability necessary for fabrication of rapid turnaround MCM-D, wafer scale integration (WSI), and system-on-A-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy for programming high current power and ground lines.
UR - https://www.scopus.com/pages/publications/85049579635
U2 - 10.1109/IITC.1998.704793
DO - 10.1109/IITC.1998.704793
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AN - SCOPUS:85049579635
T3 - Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
SP - 205
EP - 207
BT - Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1998 IEEE International Interconnect Technology Conference, IITC 1998
Y2 - 1 June 1998 through 3 June 1998
ER -