Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh; Eric M. Vogel; Joseph B. Bernstein

doi:10.1063/1.1572466

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh
, Eric M. Vogel
, Joseph B. Bernstein

نتاج البحث: نشر في مجلة › مقالة › مراجعة النظراء

15 اقتباسات (Scopus)

ملخص

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

اللغة الأصلية	الإنجليزيّة
الصفحات (من إلى)	3242-3244
عدد الصفحات	3
دورية	Applied Physics Letters
مستوى الصوت	82
رقم الإصدار	19
المعرِّفات الرقمية للأشياء	https://doi.org/10.1063/1.1572466
حالة النشر	نُشِر - 12 مايو 2003
منشور خارجيًا	نعم

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10.1063/1.1572466

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@article{430ba4d861f44ad89f085572d7b17ec4,

title = "Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown",

abstract = "Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).",

author = "Dawei Heh and Vogel, \{Eric M.\} and Bernstein, \{Joseph B.\}",

year = "2003",

month = may,

day = "12",

doi = "10.1063/1.1572466",

language = "אנגלית",

volume = "82",

pages = "3242--3244",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

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TY - JOUR

T1 - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

AU - Heh, Dawei

AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

PY - 2003/5/12

Y1 - 2003/5/12

N2 - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

AB - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

UR - https://www.scopus.com/pages/publications/0037981328

U2 - 10.1063/1.1572466

DO - 10.1063/1.1572466

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AN - SCOPUS:0037981328

SN - 0003-6951

VL - 82

SP - 3242

EP - 3244

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

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