@inproceedings{fa9731e877734c06a37fbc4a18ce8065,
title = "Impact of junction temperature on microelectronic device reliability and considerations for space applications",
abstract = "The space community and other high reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters for decades to improve device reliability and extend operating life. Semiconductor technology scaling and process improvements, however, compel us to reassess common failure mechanisms and established derating guidelines to provide affirmation that common derating factors remain adequate for current technologies used in high reliability space applications. It is incumbent upon the user to develop an understanding of advanced technology failure mechanisms through modeling, accelerated testing, and failure analysis prior to product insertion in critical applications. This paper provides a summary of an industry survey on junction temperature derating from key microelectronics suppliers, and offers recommendations to users for temperature derating for reliable operation over time. Background information on established derating factors, and recommendations for safe operating junction temperatures for newer technologies are also presented.",
keywords = "Equations, Failure analysis, Laboratories, Life estimation, Microelectronics, Propulsion, Space technology, Stress, Temperature, Testing",
author = "M. White and M. Cooper and Y. Chen and J. Bernstein",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Integrated Reliability Workshop, IRW 2003 ; Conference date: 20-10-2003 Through 23-10-2003",
year = "2003",
doi = "10.1109/IRWS.2003.1283320",
language = "אנגלית",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "133--136",
booktitle = "2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003",
address = "ארצות הברית",
}