TY - GEN
T1 - III-nitride intersubband photonics
AU - Sakr, Salam
AU - Tchernycheva, Maria
AU - Mangeney, Juliette
AU - Warde, Elias
AU - Isac, Nathalie
AU - Rigutti, Lorenzo
AU - Colombelli, Raffaele
AU - Lupu, Anatole
AU - Vivien, Laurent
AU - Julien, François H.
AU - Vardi, Alon
AU - Schacham, Schmuel E.
AU - Bahir, Gad
AU - Kotsar, Yulia
AU - Monroy, Eva
AU - Giraud, Etienne
AU - Martin, Denis
AU - Grandjean, Nicolas
PY - 2012
Y1 - 2012
N2 - This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.
AB - This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.
KW - III-nitride semiconductors
KW - intersubband transitions
KW - optoelectronic devices
KW - quantum cascade detectors
KW - quantum wells
UR - https://www.scopus.com/pages/publications/84859613224
U2 - 10.1117/12.900002
DO - 10.1117/12.900002
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AN - SCOPUS:84859613224
SN - 9780819489050
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Gallium Nitride Materials and Devices VII
T2 - Gallium Nitride Materials and Devices VII
Y2 - 23 January 2012 through 26 January 2012
ER -