@article{841327391b9e44c6af347100cd63bcec,
title = "Heavy-ion-induced soft breakdown of thin gate oxides",
abstract = "Heavy-ion induced soft and hard breakdown of thin gate oxide films was investigated. The heavy-ion-induced breakdown was studied as a function of linear energy transfer (LET), fluence and voltage applied during irradiation. The post irradiation oxide conduction was described by the Su{\~n}e quantum point contact model.",
keywords = "Dielectric breakdown, Gate oxide, Heavy ions, MOS, Microelectronics, Radiation, SiO",
author = "Conley, \{J. F.\} and Suehle, \{J. S.\} and Johnston, \{A. H.\} and B. Wang and T. Miyahara and Vogel, \{E. M.\} and Bernstein, \{J. B.\}",
note = "Funding Information: Manuscript received July 17, 2001. This work was supported under contract by the National Aeronautics and Space Administration. J. F. Conley, Jr., A. H. Johnston, and T. Miyahira are with the NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 USA (e-mail:
[email protected]). J. S. Suehle and E. M. Vogel are with the Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA. B. Wang and J. B. Bernstein are with the Center for Reliability Engineering, University of Maryland, College Park, MD 20742 USA. Publisher Item Identifier S 0018-9499(01)10669-6.; 2001 Nuclear and Sapce Radiation Effects Conference (NSREC) ; Conference date: 16-07-2001 Through 20-07-2001",
year = "2001",
month = dec,
doi = "10.1109/23.983150",
language = "אנגלית",
volume = "48",
pages = "1913--1916",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6 I",
}